ULTRALOW THRESHOLD 1.3-MU-M INGAASP-INP COMPRESSIVE-STRAINED MULTI-QUANTUM-WELL MONOLITHIC LASER ARRAY FOR PARALLEL HIGH-DENSITY OPTICAL INTERCONNECTS

An ultralow-threshold 1.3-mu m InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained multiquantum-well active layer, especially the amount of strain, the well thickness, the barrier thickness, the number of wells, and the active layer width. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3 +/- 0.09 mA and slope efficiency of 0.37 +/- 0.01 W/A), extremely low operating current of 14 mA under 5-mW output power, and long-term reliability, This array is suitable as light sources for a parallel high-density optical interconnection system, In addition, a record low CW threshold current of 0.58 mA at 20 degrees C and 1.62 mA at 90 degrees C, as a long-wavelength laser, is obtained by employing a short cavity (100 mu m) with high-reflection coatings.