OPTIMIZATION OF LOW-PRESSURE NITRIDATION REOXIDATION OF SIO2 FOR SCALED MOS DEVICES

被引：92

作者：

YANG, W

JAYARAMAN, R

SODINI, CG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

D O I：

10.1109/16.3348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：935 / 944

页数：10

共 42 条

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