ABSORPTION IN SILICON-NITRIDE FILMS

被引：9

作者：

NAZAR, FM

机构：

[1] Center for Solid State Physics, Punjab University

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 06期

关键词：

D O I：

10.1143/JJAP.18.1181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：1181 / 1182

页数：2

共 17 条

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[7]

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[8] EFFECTS OF ELECTRON-BEAM IRRADIATION ON PROPERTIES OF CVD SI-3N-4 FILMS IN MNOS STRUCTURES [J].

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SCOGGAN, GA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1599-1604

[9] ELECTRICAL-CONDUCTION OF SILICON-NITRIDE FILMS DEPOSITED BY SIH-4-NH-3 REACTION [J].

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[10]

MOTT N, 1978, REV MOD PHYS, V50, P203, DOI 10.1103/RevModPhys.50.203

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