EFFECT OF CIRCUIT STRUCTURE ON PLANARIZATION RESIST THICKNESS

被引:28
作者
WILSON, RH
PIACENTE, PA
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D O I
10.1149/1.2108781
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:981 / 984
页数:4
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共 10 条
[1]   PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) :423-429
[2]   A 3-LAYER RESIST SYSTEM FOR DEEP UV AND RIE MICROLITHOGRAPHY ON NONPLANAR SURFACES [J].
BASSOUS, E ;
EPHRATH, LM ;
PEPPER, G ;
MIKALSEN, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :478-484
[3]   DRY ETCHING TECHNOLOGY FOR 1-MU-M VLSI FABRICATION [J].
HIRATA, K ;
OZAKI, Y ;
ODA, M ;
KIMIZUKA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1323-1331
[4]  
LAVERGNE DB, 1985, P SOC PHOTO-OPT INST, V539, P115
[6]   PROPERTIES OF THIN POLYIMIDE FILMS [J].
ROTHMAN, LB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2216-2220
[7]   PLANARIZATION PROPERTIES OF RESIST AND POLYIMIDE COATINGS [J].
WHITE, LK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1543-1548
[9]  
WILSON RH, 1985, ELECTROCHEMICAL SOC, P124
[10]  
WILSON RH, 1984, ELECTROCHEM SOC EXT, V842, P609