REACTIVE SPUTTERING DEPOSITION OF LOW-TEMPERATURE TANTALUM SUBOXIDE THIN-FILMS

被引:39
作者
WU, XM
WU, PK
LU, TM
RYMASZEWSKI, EJ
机构
[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180
[2] RENSSELAER POLYTECH INST,DEPT MAT ENGN,TROY,NY 12180
关键词
D O I
10.1063/1.109094
中图分类号
O59 [应用物理学];
学科分类号
摘要
A relatively simple direct current sputtering deposition scheme has been employed to deposit 1000 angstrom tantalum oxide thin films at low temperature. At congruent-to 190-degrees-C substrate temperature, without further annealing, tantalum oxide films with a dielectric constant of 21-22 and a leakage current density as low as 10 nA/cm2 at 0.5 MV/cm electrical field strength (approximately 5 V of applied voltage) are obtained. These properties are achieved over a wide range of O2/Ar ratios when the total flow rate is kept constant. XPS measurements reveal that these films are nonstoichiometric with a composition of TaO(x) where x congruent-to 1.5. These low temperature, high dielectric constant thin films have potential applications as decoupling capacitors in very high speed electronic circuits and packaging.
引用
收藏
页码:3264 / 3266
页数:3
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