IMPROVEMENT IN RADIATION STABILITY OF SIN X-RAY MASK MEMBRANES

被引:8
作者
ARAKAWA, T [1 ]
OKUYAMA, H [1 ]
YAMASHITA, Y [1 ]
OHTA, T [1 ]
KUMAR, R [1 ]
NODA, S [1 ]
HOGA, H [1 ]
机构
[1] OKI ELECT IND CO LTD, SEMICOND TECHNOL LAB, HACHIOJI, TOKYO 193, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 12B期
关键词
X-RAY LITHOGRAPHY; X-RAY MASK MEMBRANE; SYNCHROTRON RADIATION; SILICON NITRIDE; RADIATION DAMAGE;
D O I
10.1143/JJAP.32.5941
中图分类号
O59 [应用物理学];
学科分类号
摘要
The synchrotron radiation (SR) stability of silicon nitride (SiN) X-ray mask membranes was successfully improved by low-pressure chemical vapor deposition at a growth temperature of 1000-degrees-C. The transmission of the SiN membrane formed at 1000-degrees-C exceeded 90% at about 633 nm even after SR absorption with a dose of about 100 MJ/cm3, although those of membranes formed at 800 and 900-degrees-C decreased to below 85% after the same SR absorption. In addition, SR-induced pattern displacements for the SiN membrane formed at 1000-degrees-C were suppressed to sigma(x) = 11 nm and sigma(y) = 10 nm with a dose of 20 MJ/cm3. The N/Si atomic ratio increased, and the H and O concentrations in the SiN decreased with the increase of the growth temperature. The increase ratio of the spin density before and after the SR absorption decreased with the increase of the growth temperature.
引用
收藏
页码:5941 / 5946
页数:6
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