HEAVY-METAL GETTERING IN BURIED NITRIDE SILICON-ON-INSULATOR STRUCTURES

被引:6
作者
SKORUPA, W
KNOTHE, P
GROETZSCHEL, R
机构
[1] Acad of Sciences of GDR, Dresden, East Ger, Acad of Sciences of GDR, Dresden, East Ger
关键词
SEMICONDUCTING SILICON - SEMICONDUCTING SILICON COMPOUNDS;
D O I
10.1049/el:19880314
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using Rutherford backscattering spectrometry the redistribution and gettering of implanted gold was investigated in silicon-on-insulator structures produced by high-dose nitrogen implantation. The gettering efficiency of a structure annealed at 1000 degree C containing a highly damaged silicon region near to the buried compound layer is more pronounced than that of a 1200 degree C-annealed structure with a lightly damaged silicon top layer. Gettering takes place at the interregion between silicon and silicon nitride.
引用
收藏
页码:464 / 465
页数:2
相关论文
共 8 条
[1]   CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J].
GEIPEL, HJ ;
TICE, WK .
APPLIED PHYSICS LETTERS, 1977, 30 (07) :325-327
[2]  
HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207
[3]  
HENSEL E, 1985, THESIS ADW DDR
[4]   PROPERTIES OF ION-BEAM SYNTHESIZED BURIED SILICON-NITRIDE LAYERS WITH RECTANGULAR NITROGEN PROFILES [J].
SKORUPA, W ;
WOLLSCHLAGER, K ;
KREISSIG, U ;
GROTZSCHEL, R ;
BARTSCH, H .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :285-289
[5]   MECHANISM OF CARRIER LIFETIME INCREASE IN ION-BEAM SYNTHESIZED SOI-STRUCTURES [J].
SKORUPA, W ;
OERTEL, H .
ELECTRONICS LETTERS, 1986, 22 (20) :1062-1064
[6]   INCREASED CARRIER LIFETIMES IN EPITAXIAL SILICON LAYERS ON BURIED SILICON-NITRIDE PRODUCED BY ION-IMPLANTATION [J].
SKORUPA, W ;
KREISSIG, U ;
HENSEL, E ;
BARTSCH, H .
ELECTRONICS LETTERS, 1984, 20 (10) :426-427
[7]   PROPERTIES OF EPITAXIAL SILICON LAYERS ON BURIED SILICON-NITRIDE PRODUCED BY ION-IMPLANTATION [J].
SKORUPA, W ;
KREISSIG, U ;
OERTEL, H ;
BARTSCH, H .
VACUUM, 1986, 36 (11-12) :933-937
[8]  
SKORUPA W, IN PRESS PHYSICAL RE