HEAVY-METAL GETTERING IN BURIED NITRIDE SILICON-ON-INSULATOR STRUCTURES

被引：6

作者：

SKORUPA, W

KNOTHE, P

GROETZSCHEL, R

机构：

[1] Acad of Sciences of GDR, Dresden, East Ger, Acad of Sciences of GDR, Dresden, East Ger

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 08期

关键词：

SEMICONDUCTING SILICON - SEMICONDUCTING SILICON COMPOUNDS;

D O I：

10.1049/el:19880314

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using Rutherford backscattering spectrometry the redistribution and gettering of implanted gold was investigated in silicon-on-insulator structures produced by high-dose nitrogen implantation. The gettering efficiency of a structure annealed at 1000 degree C containing a highly damaged silicon region near to the buried compound layer is more pronounced than that of a 1200 degree C-annealed structure with a lightly damaged silicon top layer. Gettering takes place at the interregion between silicon and silicon nitride.

引用

页码：464 / 465

页数：2

共 8 条

[1] CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J].