PROPERTIES OF EPITAXIAL SILICON LAYERS ON BURIED SILICON-NITRIDE PRODUCED BY ION-IMPLANTATION

被引：6

作者：

SKORUPA, W ^{[1
]}

KREISSIG, U ^{[1
]}

OERTEL, H ^{[1
]}

BARTSCH, H ^{[1
]}

机构：

[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP

来源：

VACUUM | 1986年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0042-207X(86)90144-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：933 / 937

页数：5

共 27 条

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[8] THE FORMATION OF BURIED SI3N4 LAYERS IN SILICON BY HIGH-DOSE NITROGEN ION-IMPLANTATION [J].

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[9]

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