THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON LAYER DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .4. THE PROBLEM OF MORE-THAN-ONE KIND OF DOPANT SPECIES

被引：3

作者：

KUHNE, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 07期

关键词：

D O I：

10.1002/crat.2170220705

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：883 / 892

页数：10

共 23 条

[11] INCORPORATION CONCENTRATION-DEPENDENCE OF PHOSPHORUS IN THE DEPOSITION OF SILICON EPITAXIAL LAYERS FROM SILANE-PHOSPHINE-HYDROGEN MIXTURES [J].

KUHNE, H .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (03) :333-342

[12] KINETICS OF THE INCORPORATION OF DOPANTS INTO EPITAXIAL CVD SILICON [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (10) :1217-1225

[13] TOTAL PRESSURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION DURING THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON [J].

KUHNE, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (02) :181-187

[14]

KUHNE H, 1980, CRYST RES TECHNOL, V15, P413

[15]

KUHNE H, 1987, CRYST RES TECHNOL, V22

[16]

KUHNE H, 1982, CRYST RES TECHNOL, V17, P1370

[17] SUPPRESSION OF EPITAXIAL SILICON LAYER DOPING WITH BORON IN THE PRESENCE OF HYDROGEN-CHLORIDE [J].

MORGENSTERN, T ;

KUHNE, H ;

KOKOVIN, GA ;

TESTOVA, NA ;

TITOV, AA .

CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (01) :75-83

[18]

Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P361, DOI 10.1016/0022-0248(70)90064-3

[19]

Rai-Choudhury P., 1970, Journal of Crystal Growth, V7, P353, DOI 10.1016/0022-0248(70)90063-1

[20] TRANSIENT AND STEADY-STATE RESPONSE OF DOPANT SYSTEM OF A SILICON EPITAXIAL REACTOR - TRANSFER-FUNCTION APPROACH [J].

REIF, R ;

KAMINS, TI ;

SARASWAT, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) :1860-1866

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