INTERFACE STATES AND IMPURITIES IN MOS STRUCTURES WITH VERY THIN TUNNELING BARRIERS

被引：13

作者：

BALK, P ^{[1
]}

THANH, LD ^{[1
]}

EWERT, S ^{[1
]}

KUBALL, M ^{[1
]}

SCHMITZ, S ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90105-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：304 / 310

页数：7

共 16 条

[1]

ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135

[2] ELASTIC AND INELASTIC ELECTRON-TUNNELING WITH THE USE OF SIO2+ALOX AND ALOX+SI BARRIERS [J].

BELL, LD ;

COLEMAN, RV .

PHYSICAL REVIEW B, 1984, 30 (08) :4120-4129

[3] INELASTIC ELECTRON-TUNNELING SPECTROSCOPY ON MOS STRUCTURES WITH VERY THIN OXIDE-FILMS [J].

BUSMANN, HG ;

EWERT, S ;

SANDER, W ;

SEIBERT, K ;

BALK, P ;

STEFFEN, A .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1985, 59 (04) :439-443

[4] Tunneling Spectroscopy in degenerate p-type sificon [J].

Cullen, D. E. ;

Wolf, E. L. ;

Compton, W. Dale .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3157-3169

[5] ANALYSIS OF TUNNELING MEASUREMENT OF ELECTRONIC SELF-ENERGIES DUE TO INTERACTIONS OF ELECTRONS AND HOLES WITH OPTICAL PHONONS IN SEMICONDUCTORS [J].

DAVIS, LC ;

DUKE, CB .

PHYSICAL REVIEW, 1969, 184 (03) :764-+

[6]

EWERT S, 1984, FESTKOR-ADV SOLID ST, V24, P73

[7]

GROSSE P, 1984, 3RD P INT C INFR PHY, P26

[8] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J].

KAR, S ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :221-+

[9] THE STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS DETERMINED BY INFRARED-SPECTROSCOPY [J].

KNOLLE, WR ;

OSENBACH, JW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1248-1254

[10] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

← 1 2 →