GAAS TRICKLE TRANSISTOR DYNAMIC LOGIC

被引:9
作者
HOE, DHK
SALAMA, CAT
机构
[1] Department of Electrical Engineering, University of Toronto, Toronto
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1109/4.90099
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A GaAs dynamic logic gate is proposed which uses a trickle transistor to compensate for leakage from the precharged node. This trickle transistor dynamic logic (TTDL) circuit is configured as a domino logic gate and a differential cascode voltage switch logic (CVSL) gate. Delay chains were implemented in a 1-mu-m GaAs E/D process in order to obtain an experimental characterization of these gates. In addition, the TTDL gates were used to implement a 4-b carry-lookahead adder. The adder has a critical delay of 0.8 ns and a power dissipation of 130 mW.
引用
收藏
页码:1441 / 1448
页数:8
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