LOW-ENERGY MASS-SEPARATED ION-BEAM DEPOSITION OF MATERIALS

被引：35

作者：

TOKUYAMA, T

YAGI, K

MIYAKE, K

TAMURA, M

NATSUAKI, N

TACHI, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

Compendex;

D O I：

10.1016/0029-554X(81)90694-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

SEMICONDUCTING GERMANIUM

引用

页码：241 / 250

页数：10

共 15 条

[1] ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON
AISENBERG, S
CHABOT, R
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2953 - +
[2] THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .1. SYSTEM SPECIFICATION AND DESIGN
AMANO, J
BRYCE, P
LAWSON, RPW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 591 - 595
[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[4] COLLIGON JS, 1976, 1975 P INT C APPL IO, P357
[5] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES
CULLIS, AG
BOOKER, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &
[6] REACTION OF FLUORINE-ATOMS WITH SIO2
FLAMM, DL
MOGAB, CJ
SKLAVER, ER
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6211 - 6213
[7] DIRECT COLLECTION OF SOME METAL IONS IN AN ELECTROMAGNETIC ISOTOPE SEPARATOR AND RELATED SURFACE EFFECTS
FONTELL, A
ARMINEN, E
[J]. CANADIAN JOURNAL OF PHYSICS, 1969, 47 (21) : 2405 - &
[8] EPITAXIAL SYNTHESIS OF DIAMOND BY CARBON-ION DEPOSITION AT LOW-ENERGY
FREEMAN, JH
TEMPLE, W
GARD, GA
[J]. NATURE, 1978, 275 (5681) : 634 - 635
[9] EFFECT OF ION IRRADIATION ON ADHERENCE OF GERMANIUM FILMS
HIRSCH, EH
VARGA, IK
[J]. THIN SOLID FILMS, 1978, 52 (03) : 445 - 452
[10] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION
ITOH, T
NAKAMURA, T
MUROMACHI, M
SUGIYAMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) : 553 - 557

← 1 2 →