CHARACTERIZATION OF ULTRATHIN DIELECTRICS GROWN BY MICROWAVE AFTERGLOW OXYGEN AND N2O PLASMA

被引：17

作者：

CHEN, PC ^{[1
]}

HSU, KYJ ^{[1
]}

LIN, JY ^{[1
]}

HWANG, HL ^{[1
]}

机构：

[1] NATL CHUNG CHENG INST TECHNOL,DEPT ELECT ENGN,TAYUAN,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

MICROWAVE AFTERGLOW PLASMA; ULTRATHIN DIELECTRICS; OXYNITRIDE; N2O; BREAKDOWN; INTERFACE STATE DENSITY; SIMS;

D O I：

10.1143/JJAP.34.973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin dielectrics, oxides and oxynitrides were grown using microwave afterglow oxygen and N2O plasma at low temperature. N2O plasma annealing and pretreatment improved the breakdown properties of O-2 plasma oxides. From secondary ion mass spectroscopy (SIMS) analysis, nitrogen was found to be incorporated into oxides effectively by this low-temperature method. Nitrogen content was highest at the oxide surface and decreased toward the oxide/Si interface. This indicates a nitridation mechanism different from the conventional N2O gas annealing or oxidation processes. The relationships among interface state densities, tunneling current and nitrogen profiles were also investigated by C-V and I-V measurements.

引用

页码：973 / 977

页数：5

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