SPATIAL AND ENERGETIC DISTRIBUTION OF SI-SIO2 NEAR-INTERFACE STATES

被引:57
作者
LAKHDARI, H [1 ]
VUILLAUME, D [1 ]
BOURGOIN, JC [1 ]
机构
[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75221 PARIS 05,FRANCE
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 18期
关键词
D O I
10.1103/PhysRevB.38.13124
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:13124 / 13132
页数:9
相关论文
共 29 条
[21]   TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES [J].
SCHULZ, M ;
JOHNSON, NM .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :622-625
[23]  
STESMANS A, 1987, P C INSULATING FILMS, P134
[24]   STATES IN GAP IN GLASSY SEMICONDUCTORS [J].
STREET, RA ;
MOTT, NF .
PHYSICAL REVIEW LETTERS, 1975, 35 (19) :1293-1296
[25]  
SUKARAI T, 1981, J APPL PHSY, V52, P2889
[26]   TIME-DEPENDENT RESPONSE OF INTERFACE STATES IN INDIUM-PHOSPHIDE METAL-INSULATOR SEMICONDUCTOR CAPACITORS INVESTIGATED WITH CONSTANT-CAPACITANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
VANSTAA, P ;
ROMBACH, H ;
KASSING, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4014-4021
[27]  
VINCENT G, 1978, THESIS LYON FRANCE
[28]   OXIDE TRAPS IN SI-SIO2 STRUCTURES CHARACTERIZED BY TUNNEL EMISSION WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
VUILLAUME, D ;
BOURGOIN, JC ;
LANNOO, M .
PHYSICAL REVIEW B, 1986, 34 (02) :1171-1183
[29]  
VUILLAUME D, 1988, P MATERIALS RES SOC, V105, P235