ENHANCED THERMAL DONOR FORMATION AND OXYGEN DIFFUSION IN SILICON EXPOSED TO A HYDROGEN PLASMA

被引:27
作者
MURRAY, R
BROWN, AR
NEWMAN, RC
机构
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期
关键词
D O I
10.1016/0921-5107(89)90261-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:299 / 302
页数:4
相关论文
共 17 条
[1]   THERMAL DONOR FORMATION AND THE LOSS OF OXYGEN FROM SOLUTION IN SILICON HEATED AT 450-DEGREES-C [J].
CLAYBOURN, M ;
NEWMAN, RC .
APPLIED PHYSICS LETTERS, 1988, 52 (25) :2139-2141
[2]   EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].
FULLER, CS ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436
[3]   OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].
GOSELE, U ;
TAN, TY .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92
[4]  
Hage J., 1989, Materials Science Forum, V38-41, P487, DOI 10.4028/www.scientific.net/MSF.38-41.487
[5]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[6]  
LINDSTROM JL, 1986, MRS P, V59, P45
[7]   EXCESS SOLUBILITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].
MIKKELSEN, JC .
APPLIED PHYSICS LETTERS, 1982, 41 (09) :871-873
[8]  
MIKKELSON JC, 1982, APPL PHYS LETT, V40, P366
[9]   THERMAL DONORS IN SILICON - OXYGEN CLUSTERS OR SELF-INTERSTITIAL AGGREGATES [J].
NEWMAN, RC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (30) :L967-L972
[10]  
NEWMAN RC, 1988, I PHYS C, V95, P211