THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY

[11] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 169 - &

[12] MICROWAVE MEASUREMENT OF VELOCITY-ELECTRIC-FIELD CHARACTERISTIC OF INHOMOGENEOUS EPITAXIAL GAAS WITH CONDUCTING SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 4025 - +

[13] BASIC PRINCIPLES AND PROPERTIES OF AVALANCHE TRANSIT-TIME DEVICES [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) : 752 - +

[14] RESONANCE AND PARAMETRIC EFFECTS IN IMPATT DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) : 282 - &

[15] A GAAS AVALANCHE DIODE ANALYSIS AND AN APPROXIMATE INDIRECT MEASUREMENT OF HOLE SATURATION VELOCITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) : 917 - +

[16] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 89 - &

[17] LEFEBVRE M, 1969, ACTA ELECTRON, V12, P157

[18] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[19] THEORETICAL STUDY OF MICROWAVE OSCILLATION EFFICIENCY IN IMPROVED READ DIODES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 29 - &

[20] SATURATION CURRENT AND LARGE-SIGNAL OPERATION OF A READ DIODE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1363 - &

[11] ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 169 - &

[12] MICROWAVE MEASUREMENT OF VELOCITY-ELECTRIC-FIELD CHARACTERISTIC OF INHOMOGENEOUS EPITAXIAL GAAS WITH CONDUCTING SUBSTRATE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 4025 - +

[13] BASIC PRINCIPLES AND PROPERTIES OF AVALANCHE TRANSIT-TIME DEVICES [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) : 752 - +

[14] RESONANCE AND PARAMETRIC EFFECTS IN IMPATT DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) : 282 - &

[15] A GAAS AVALANCHE DIODE ANALYSIS AND AN APPROXIMATE INDIRECT MEASUREMENT OF HOLE SATURATION VELOCITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) : 917 - +

[16] READ DIODE-AN AVALANCHING TRANSIT-TIME NEGATIVE-RESISTANCE OSCILLATOR (SI IMPURITY EFFECTS E/T) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 89 - &

[17] LEFEBVRE M, 1969, ACTA ELECTRON, V12, P157

[18] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434

[19] THEORETICAL STUDY OF MICROWAVE OSCILLATION EFFICIENCY IN IMPROVED READ DIODES [J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 29 - &

[20] SATURATION CURRENT AND LARGE-SIGNAL OPERATION OF A READ DIODE [J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1363 - &