COMPETITIVE KINETIC PROCESSES DURING HOMOEPITAXIAL GROWTH ON GE(111)

被引：18

作者：

YOKOTSUKA, T

WILBY, MR

VVEDENSKY, DD

KAWAMURA, T

FUKUTANI, K

INO, S

机构：

[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

[2] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN

[3] UNIV LONDON UNIV COLL,DEPT ELECT & ELECTR ENGN,LONDON WC1E 7JE,ENGLAND

[4] YAMANASHI UNIV,DEPT PHYS,KOFU,YAMANASHI 400,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The homoepitaxial growth of Ge(111) has been investigated with reflection high-energy electron diffraction (RHEED) measurements supported by Monte Carlo simulations. At low temperatures, the RHEED oscillations show a monolayer period, while at higher temperatures the oscillation period becomes bilayer. The simulations reveal that a short-range nonthermal diffusion process is dominant at low temperatures, and that the driving force behind the transition to bilayer growth is the increasing importance of thermal diffusion.

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页码：1673 / 1675

页数：3

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