REACTIVE ION ETCHING OF LINBO3

[1] CANAVELLO BJ, 1979, IBM TECH DISCL B, V19, P4048

[2] GEODESIC LENSES IN SINGLE-MODE LINBO3 WAVEGUIDES [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 263 - 265

[3] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[4] Garvin H L, 1973, Appl Opt, V12, P455, DOI 10.1364/AO.12.000455

[5] LITHIUM-NIOBATE RIDGE WAVEGUIDE MODULATOR [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 622 - 624

[6] CF4 PLASMA-ETCHING ON LINBO3 [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 756 - 758

[7] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[8] SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 587 - 594

[9] EFFICIENT LINBO3 BALANCED BRIDGE MODULATOR-SWITCH WITH AN ION-ETCHED SLOT [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 40 - 42

[10] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[1] CANAVELLO BJ, 1979, IBM TECH DISCL B, V19, P4048

[2] GEODESIC LENSES IN SINGLE-MODE LINBO3 WAVEGUIDES [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 263 - 265

[3] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[4] Garvin H L, 1973, Appl Opt, V12, P455, DOI 10.1364/AO.12.000455

[5] LITHIUM-NIOBATE RIDGE WAVEGUIDE MODULATOR [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 622 - 624

[6] CF4 PLASMA-ETCHING ON LINBO3 [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 756 - 758

[7] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[8] SELECTIVE ETCHING OF SIO2 RELATIVE TO SI BY PLASMA REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 587 - 594

[9] EFFICIENT LINBO3 BALANCED BRIDGE MODULATOR-SWITCH WITH AN ION-ETCHED SLOT [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 40 - 42

[10] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803