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A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .4. ADDITIONAL CONFIRMATION OF INDUCTION PERIOD AND NUCLEATION MECHANISMS

被引：11
作者：
WATTS, BE
BRADLEY, RR
JOYCE, BA
机构：
来源：
PHILOSOPHICAL MAGAZINE | 1968年 / 17卷 / 150期
关键词：
D O I：
10.1080/14786436808223193
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1163 / &
相关论文
共 4 条
[1]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J].
BOOKER, GR ;
JOYCE, BA .
PHILOSOPHICAL MAGAZINE, 1966, 14 (128) :301-&
[2]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .I. EXPERIMENTAL METHODS [J].
JOYCE, BA ;
BRADLEY, RR .
PHILOSOPHICAL MAGAZINE, 1966, 14 (128) :289-+
[3]   A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].
JOYCE, BA ;
BRADLEY, RR ;
BOOKER, GR .
PHILOSOPHICAL MAGAZINE, 1967, 15 (138) :1167-&
[4]   NUCLEATION AND INITIAL-GROWTH BEHAVIOR OF THIN-FILM DEPOSITS [J].
LEWIS, B ;
CAMPBELL, DS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (05) :209-&
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