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STUDIES OF TMGA ADSORPTION ON THIN GAAS AND INAS (001) LAYERS
被引:8
作者
:
MAA, BY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
MAA, BY
[
1
]
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DAPKUS, PD
[
1
]
机构
:
[1]
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1990年
/ 105卷
/ 1-4期
关键词
:
D O I
:
10.1016/0022-0248(90)90364-Q
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
Adsorption of TMGa on thin overlayers of GaAs/AlAs and InAs/InP structures is investigated. The number of Ga monolayers is determined precisely from such structures for various TMGa exposures. Slower reaction rates for TMGa on Ga-stabilized surfaces compared to As-stabilized surfaces result in the self limiting mechanism of atomic layer epitaxy (ALE) using TMGa. On the other hand, adsorption of TMGa on InAs (001) surfaces involves more than the very top layer atoms. Exchange of In/Ga is observed with In atoms floating on top of the surface, which enhances Ga atom formation and impedes saturation as in the case of GaAs surfaces. © 1990.
引用
收藏
页码:213 / 220
页数:8
相关论文
共 14 条
[1]
DIRECT OBSERVATION OF GAAS ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
CHIU, TH
论文数:
0
引用数:
0
h-index:
0
CHIU, TH
[J].
APPLIED PHYSICS LETTERS,
1989,
55
(12)
: 1244
-
1246
[2]
COLAS E, 1989, I PHYS C SER, V96, P101
[3]
GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY
DENBAARS, SP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DENBAARS, SP
BEYLER, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
BEYLER, CA
HARIZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
HARIZ, A
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(19)
: 1530
-
1532
[4]
INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES
GUILLE, C
论文数:
0
引用数:
0
h-index:
0
GUILLE, C
HOUZAY, F
论文数:
0
引用数:
0
h-index:
0
HOUZAY, F
MOISON, JM
论文数:
0
引用数:
0
h-index:
0
MOISON, JM
BARTHE, F
论文数:
0
引用数:
0
h-index:
0
BARTHE, F
[J].
SURFACE SCIENCE,
1987,
189
: 1041
-
1046
[5]
EFFECT OF EXPOSURE TO GROUP-III ALKYLS ON COMPOUND SEMICONDUCTOR SURFACES OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
ISHII, H
论文数:
0
引用数:
0
h-index:
0
ISHII, H
OHNO, H
论文数:
0
引用数:
0
h-index:
0
OHNO, H
MATSUZAKI, K
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, K
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
95
(1-4)
: 132
-
135
[6]
INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY
KODAMA, K
论文数:
0
引用数:
0
h-index:
0
KODAMA, K
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
OZEKI, M
MOCHIZUKI, K
论文数:
0
引用数:
0
h-index:
0
MOCHIZUKI, K
OHTSUKA, N
论文数:
0
引用数:
0
h-index:
0
OHTSUKA, N
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(07)
: 656
-
657
[7]
MAA BY, 1989, 4TH OMVPE WORKSH MON
[8]
CARBON INCORPORATION IN GAAS LAYER GROWN BY ATOMIC LAYER EPITAXY
MOCHIZUKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
MOCHIZUKI, K
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
OZEKI, M
KODAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
KODAMA, K
OHTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
OHTSUKA, N
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
: 557
-
561
[9]
EPITAXIAL REGROWTH OF AN INAS SURFACE ON INP - AN EXAMPLE OF ARTIFICIAL SURFACES
MOISON, JM
论文数:
0
引用数:
0
h-index:
0
MOISON, JM
BENSOUSSAN, M
论文数:
0
引用数:
0
h-index:
0
BENSOUSSAN, M
HOUZAY, F
论文数:
0
引用数:
0
h-index:
0
HOUZAY, F
[J].
PHYSICAL REVIEW B,
1986,
34
(03):
: 2018
-
2021
[10]
GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE
MORI, K
论文数:
0
引用数:
0
h-index:
0
MORI, K
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
YOSHIDA, M
USUI, A
论文数:
0
引用数:
0
h-index:
0
USUI, A
TERAO, H
论文数:
0
引用数:
0
h-index:
0
TERAO, H
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(01)
: 27
-
29
←
1
2
→
共 14 条
[1]
DIRECT OBSERVATION OF GAAS ATOMIC LAYER EPITAXY BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
CHIU, TH
论文数:
0
引用数:
0
h-index:
0
CHIU, TH
[J].
APPLIED PHYSICS LETTERS,
1989,
55
(12)
: 1244
-
1246
[2]
COLAS E, 1989, I PHYS C SER, V96, P101
[3]
GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY
DENBAARS, SP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DENBAARS, SP
BEYLER, CA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
BEYLER, CA
HARIZ, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
HARIZ, A
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089
DAPKUS, PD
[J].
APPLIED PHYSICS LETTERS,
1987,
51
(19)
: 1530
-
1532
[4]
INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES
GUILLE, C
论文数:
0
引用数:
0
h-index:
0
GUILLE, C
HOUZAY, F
论文数:
0
引用数:
0
h-index:
0
HOUZAY, F
MOISON, JM
论文数:
0
引用数:
0
h-index:
0
MOISON, JM
BARTHE, F
论文数:
0
引用数:
0
h-index:
0
BARTHE, F
[J].
SURFACE SCIENCE,
1987,
189
: 1041
-
1046
[5]
EFFECT OF EXPOSURE TO GROUP-III ALKYLS ON COMPOUND SEMICONDUCTOR SURFACES OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
ISHII, H
论文数:
0
引用数:
0
h-index:
0
ISHII, H
OHNO, H
论文数:
0
引用数:
0
h-index:
0
OHNO, H
MATSUZAKI, K
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, K
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
HASEGAWA, H
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
95
(1-4)
: 132
-
135
[6]
INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY
KODAMA, K
论文数:
0
引用数:
0
h-index:
0
KODAMA, K
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
OZEKI, M
MOCHIZUKI, K
论文数:
0
引用数:
0
h-index:
0
MOCHIZUKI, K
OHTSUKA, N
论文数:
0
引用数:
0
h-index:
0
OHTSUKA, N
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(07)
: 656
-
657
[7]
MAA BY, 1989, 4TH OMVPE WORKSH MON
[8]
CARBON INCORPORATION IN GAAS LAYER GROWN BY ATOMIC LAYER EPITAXY
MOCHIZUKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
MOCHIZUKI, K
OZEKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
OZEKI, M
KODAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
KODAMA, K
OHTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
Fujitsu Lab Ltd, Japan
OHTSUKA, N
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
93
(1-4)
: 557
-
561
[9]
EPITAXIAL REGROWTH OF AN INAS SURFACE ON INP - AN EXAMPLE OF ARTIFICIAL SURFACES
MOISON, JM
论文数:
0
引用数:
0
h-index:
0
MOISON, JM
BENSOUSSAN, M
论文数:
0
引用数:
0
h-index:
0
BENSOUSSAN, M
HOUZAY, F
论文数:
0
引用数:
0
h-index:
0
HOUZAY, F
[J].
PHYSICAL REVIEW B,
1986,
34
(03):
: 2018
-
2021
[10]
GAAS GROWTH BY ATOMIC LAYER EPITAXY USING DIETHYLGALLIUMCHLORIDE
MORI, K
论文数:
0
引用数:
0
h-index:
0
MORI, K
YOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
YOSHIDA, M
USUI, A
论文数:
0
引用数:
0
h-index:
0
USUI, A
TERAO, H
论文数:
0
引用数:
0
h-index:
0
TERAO, H
[J].
APPLIED PHYSICS LETTERS,
1988,
52
(01)
: 27
-
29
←
1
2
→