DEPOSITION AND CHARACTERIZATION OF GALLIUM-ARSENIDE FILMS FOR SOLAR-CELLS APPLICATIONS

被引：4

作者：

CHU, SS

CHU, TL

LEE, YT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：640 / 645

页数：6

共 14 条

[1] MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1) [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1473-&

[2]

CHU SS, 1979, J APPL PHYS, V50, P5805, DOI 10.1063/1.326723

[3] GALLIUM-ARSENIDE FILMS ON TUNGSTEN-GRAPHITE SUBSTRATES [J].

CHU, SS ;

CHU, TL ;

YANG, HT ;

HONG, KH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1668-1671

[4] THIN-FILM GALLIUM-ARSENIDE SOLAR-CELLS ON TUNGSTEN-GRAPHITE SUBSTRATES [J].

CHU, SS ;

CHU, TL ;

YANG, HT .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :557-559

[5]

Dapkus P. D., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P960

[6]

ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[7] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[8] GRAIN-BOUNDARY EDGE PASSIVATION OF GAAS FILMS BY SELECTIVE ANODIZATION [J].

PANDE, KP ;

HSU, YS ;

BORREGO, JM ;

GHANDHI, SK .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :717-719

[9] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE [J].

RAICHOUDBURY, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1745-+

[10] THIN FILM SOLAR CELLS AND A REVIEW OF RECENT RESULTS ON GAAS [J].

RAPPAPOR.P .

REVUE DE PHYSIQUE APPLIQUEE, 1966, 1 (03) :154-&

← 1 2 →