GALLIUM-ARSENIDE FILMS ON TUNGSTEN-GRAPHITE SUBSTRATES

[1] GIESECKE VG, 1958, ACTA CRYSTALLOGR, V11, P369

[2] Hovel H. J., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P913

[3] ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[4] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[5] THEORETICAL CONSIDERATIONS GOVERNING THE CHOICE OF THE OPTIMUM SEMICONDUCTOR FOR PHOTOVOLTAIC SOLAR ENERGY CONVERSION [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (07) : 777 - 784

[6] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1745 - +

[7] EPITAXIAL SYNTHESIS OF GAAS USING A FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (04) : 365 - +

[8] INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 405 - &

[9] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &

[1] GIESECKE VG, 1958, ACTA CRYSTALLOGR, V11, P369

[2] Hovel H. J., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P913

[3] ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[4] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[5] THEORETICAL CONSIDERATIONS GOVERNING THE CHOICE OF THE OPTIMUM SEMICONDUCTOR FOR PHOTOVOLTAIC SOLAR ENERGY CONVERSION [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (07) : 777 - 784

[6] EPITAXIAL GALLIUM ARSENIDE FROM TRIMETHYL GALLIUM AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1745 - +

[7] EPITAXIAL SYNTHESIS OF GAAS USING A FLOW SYSTEM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (04) : 365 - +

[8] INFLUENCE OF SUBSTRATE TEMPERATURE ON GAAS EPITAXIAL DEPOSITION RATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 405 - &

[9] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED EPITAXIAL GAAS1-XPX USING ARSINE AND PHOSPHINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 724 - &