SPOTTY DEFECTS IN OXIDIZED FLOATING-ZONED DISLOCATION-FREE SILICON CRYSTALS

[1] ETCH PITS OBSERVED IN DISLOCATION-FREE SILICON CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) : 458 - &

[2] NEW X-RAY TOPOGRAPHIC TECHNIQUE FOR DETECTION OF SMALL DEFECTS IN HIGHLY PERFECT CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 1922 - &

[3] FURUSHO K, 1964, JPN J APPL PHYS, V3, P203

[4] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1563 - 1593

[5] HIRSH PB, 1965, ELECTRON MICROS, P176

[6] IIZUKA T, 1965, JPN J APPL PHYS, V4, P1018

[7] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J]. ACTA METALLURGICA, 1966, 14 (10): : 1157 - &

[8] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[9] KAWAMURA T, 1969, ACTA CRYSTALL A-CRYS, VA 25, pS43

[10] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[1] ETCH PITS OBSERVED IN DISLOCATION-FREE SILICON CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) : 458 - &

[2] NEW X-RAY TOPOGRAPHIC TECHNIQUE FOR DETECTION OF SMALL DEFECTS IN HIGHLY PERFECT CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 1922 - &

[3] FURUSHO K, 1964, JPN J APPL PHYS, V3, P203

[4] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1563 - 1593

[5] HIRSH PB, 1965, ELECTRON MICROS, P176

[6] IIZUKA T, 1965, JPN J APPL PHYS, V4, P1018

[7] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J]. ACTA METALLURGICA, 1966, 14 (10): : 1157 - &

[8] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1751 - 1756

[9] KAWAMURA T, 1969, ACTA CRYSTALL A-CRYS, VA 25, pS43

[10] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &