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IMPURITY CONCENTRATION BROADENING OF ACCEPTOR LINES IN INDIUM-DOPED SILICON

被引：2
作者：
BHATIA, KL
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1971年 / 46卷 / 02期
关键词：
D O I：
10.1002/pssb.2220460230
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：723 / &
相关论文
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