DEFECT REDUCTION EFFECTS IN GAAS ON SI SUBSTRATES BY THERMAL ANNEALING

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] ALJASSIM MM, 1988, 1988 MAT RES SOC SPR

[3] DISLOCATION VELOCITIES IN GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745

[4] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225

[5] ISHIDA K, 1987, JPN J APPL PHYS, V26, pL1141

[6] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[7] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1928 - 1930

[8] SHIMIZU M, 1986, J JPN ASS CRYST GROW, V13, P253

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[2] ALJASSIM MM, 1988, 1988 MAT RES SOC SPR

[3] DISLOCATION VELOCITIES IN GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745

[4] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225

[5] ISHIDA K, 1987, JPN J APPL PHYS, V26, pL1141

[6] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33

[7] CROSSHATCH PATTERNS IN GAAS FILMS ON SI SUBSTRATES DUE TO THERMAL STRAIN IN ANNEALING PROCESSES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1928 - 1930

[8] SHIMIZU M, 1986, J JPN ASS CRYST GROW, V13, P253