共 18 条
- [12] SKROMME BJ, 1987, COMMUNICATION OCT
- [13] EXPERIMENTAL RESULTS EXAMINING VARIOUS MODELS OF SCHOTTKY-BARRIER FORMATION ON GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1178 - 1183
- [14] UNIFIED DEFECT MODEL AND BEYOND [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1019 - 1027
- [15] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 445 - 448
- [17] PROBLEMS AND PROSPECTS OF COMPOUND SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1009 - 1018