EU-DOPED CAF2 GROWN ON SI(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

FANG, XM

CHATTERJEE, T

MCCANN, PJ

LIU, WK

SANTOS, MB

SHAN, W

SONG, JJ

机构：

[1] UNIV OKLAHOMA,ELECTR PROPERTIES MAT LAB,NORMAN,OK 73019

[2] UNIV OKLAHOMA,DEPT PHYS & ASTRON,NORMAN,OK 73019

[3] OKLAHOMA STATE UNIV,DEPT PHYS,STILLWATER,OK 74078

[4] OKLAHOMA STATE UNIV,CTR LASER RES,STILLWATER,OK 74078

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 13期

关键词：

D O I：

10.1063/1.114367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Eu is incorporated into CaF2 films grown on Si(100) by molecular beam epitaxy using elemental Eu evaporation, Eu doping as high as 4.05 at. % does not significantly degrade the surface morphology, indicating a relatively high solubility of Eu in CaF2. Photoluminescence spectra from Eu-doped CaF2 show strong blue emissions from Eu2+ ions in cubic sites. The inhomogeneous broadening of the zero-phonon line near 24 190 cm(-1) is reduced by similar to 20% upon in situ annealing at 1100 degrees C. (C) 1995 American Institute of Physics.

引用

页码：1891 / 1893

页数：3

共 17 条

[1] FLATTENING THE SURFACE OF CAF2/SI(100) STRUCTURES BY POST-GROWTH ANNEALING [J].