PHOTOLUMINESCENCE IN INP HYDROGENATED BY PLASMA EXPOSURE

被引：11

作者：

SUGINO, T ^{[1
]}

BOONYASIRIKOOL, A ^{[1
]}

SHIRAFUJI, J ^{[1
]}

HASHIMOTO, H ^{[1
]}

机构：

[1] OSAKA ELECTROCOMMUN UNIV,FAC ENGN,DEPT ELECTR ENGN,NEYAGAWA,OSAKA 572,JAPAN

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 09期

关键词：

D O I：

10.1049/el:19890401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：590 / 591

页数：2

共 7 条

[1] HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN PARA-TYPE GAAS [J].

JOHNSON, NM ;

BURNHAM, RD ;

STREET, RA ;

THORNTON, RL .

PHYSICAL REVIEW B, 1986, 33 (02) :1102-1105

[2] SI DONOR NEUTRALIZATION IN HIGH-PURITY GAAS [J].

PAN, N ;

LEE, B ;

BOSE, SS ;

KIM, MH ;

HUGHES, JS ;

STILLMAN, GE ;

ARAI, K ;

NASHIMOTO, Y .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1832-1834

[3] HYDROGEN PASSIVATION OF C ACCEPTORS IN HIGH-PURITY GAAS [J].

PAN, N ;

BOSE, SS ;

KIM, MH ;

STILLMAN, GE ;

CHAMBERS, F ;

DEVANE, G ;

ITO, CR ;

FENG, M .

APPLIED PHYSICS LETTERS, 1987, 51 (08) :596-598

[4] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS [J].

PEARTON, SJ ;

DAUTREMONTSMITH, WC ;

CHEVALLIER, J ;

TU, CW ;

CUMMINGS, KD .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2821-2827

[5]

PEARTON SJ, 1982, J APPL PHYS, V41, P80

[6] PHOTOLUMINESCENCE ENHANCEMENT OF INP TREATED WITH ACTIVATED HYDROGEN [J].

VIKTOROVITCH, P ;

BENYAHIA, F ;

SANTINELLI, C ;

BLANCHET, R ;

LEYRAL, P ;

GARRIGUES, M .

APPLIED SURFACE SCIENCE, 1988, 31 (03) :317-326

[7] INDIUM-PHOSPHIDE .1. PHOTOLUMINESCENCE MATERIALS STUDY [J].

WILLIAMS, EW ;

ELDER, W ;

ASTLES, MG ;

WEBB, M ;

MULLIN, JB ;

STRAUGHAN, B ;

TUFTON, PJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1741-1749

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