GROWTH-MECHANISM OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

被引：16

作者：

HSU, CC

XU, JB

WILSON, IH

机构：

[1] Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, NT

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期

关键词：

D O I：

10.1063/1.111697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed concentric ring patterns on metalorganic vapor phase epitaxy grown GaAs surface by atomic force microscopy. The growth mechanism for the concentric ring pattern is different from that of spiral growth due to screw dislocations. A more plausible growth mechanism for the concentric rings is the stacking fault mechanism. Stacking faults that emerge from the (100) growth surface create steps of 1/3 and 2/3 the elementary height. The 1/3 and 2/3 substeps act as persistent step sources for growth.

引用

页码：2105 / 2107

页数：3

共 6 条

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