PULSED LASER-HEATING OF SILICON-NITRIDE CAPPED GAAS - OPTICAL-PROPERTIES AT HIGH-TEMPERATURE

被引:2
作者
BHAT, A [1 ]
YAO, HD [1 ]
COMPAAN, A [1 ]
HORAK, A [1 ]
RYS, A [1 ]
机构
[1] KANSAS STATE UNIV AGR & APPL SCI,DEPT ELECT & COMP ENGN,MANHATTAN,KS 66506
关键词
D O I
10.1063/1.341647
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2591 / 2594
页数:4
相关论文
共 18 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]   TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].
AUSTON, DH ;
SURKO, CM ;
VENKATESAN, TNC ;
SLUSHER, RE ;
GOLOVCHENKO, JA .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440
[3]   TIME-RESOLVED TRANSMISSION OF GAAS UNDER INTENSE LASER EXCITATION [J].
AYDINLI, A ;
COMPAAN, A ;
LO, HW ;
LEE, MC .
PHYSICS LETTERS A, 1981, 86 (03) :199-202
[4]   SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].
BEAN, KE ;
GLEIM, PS ;
YEAKLEY, RL ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&
[5]  
BHAT A, 1987, B AM PHYS SOC, V32, P653
[6]  
BLAKEMORE DS, 1982, J APPL PHYS, V53, pR123
[7]   EXCIMER AND DYE-LASER ANNEALING OF SILICON-NITRIDE-CAPPED, SI-IMPLANTED GAAS [J].
COMPAAN, A ;
ABBI, SC ;
YAO, HD ;
BHAT, A ;
LANGER, DW .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2561-2563
[8]   RESONANCE RAMAN-SCATTERING IN SI AT ELEVATED-TEMPERATURES [J].
COMPAAN, A ;
TRODAHL, HJ .
PHYSICAL REVIEW B, 1984, 29 (02) :793-801
[9]   INITIAL DECOMPOSITION OF GAAS DURING RAPID THERMAL ANNEALING [J].
HAYNES, TE ;
CHU, WK ;
ASELAGE, TL ;
PICRAUX, ST .
APPLIED PHYSICS LETTERS, 1986, 49 (11) :666-668
[10]   PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J].
INADA, T ;
TOKUNAGA, K ;
TAKA, S .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :546-548