METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD) OF COMPOUND SEMICONDUCTORS .2. PREPARATION OF ZNSE EPITAXIAL LAYERS ON (100) ORIENTATED GAAS SINGLE-CRYSTALLINE SUBSTRATES

被引：9

作者：

FAN, G ^{[1
]}

WILLIAMS, JO ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,SOLID STATE CHEM GRP,POB 88,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I | 1987年 / 83卷

关键词：

D O I：

10.1039/f19878300323

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：323 / 338

页数：16

共 35 条

WRIGHT, PJ ;

COCKAYNE, B .

[32] SHALLOW N-ACCEPTOR IN N+-IMPLANTED ZNSE [J].

WU, ZL ;

MERZ, JL ;

WERKHOVEN, CJ ;

FITZPATRICK, BJ ;

BHARGAVA, RN .

[33] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

YAO, T ;

OGURA, M ;

MATSUOKA, S ;

MORISHITA, T .

[34] CHARACTERIZATION OF ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

YAO, T .

[35]

YAO T, 1983, JPN J APPL PHYS, V22, pL114