RAPID THERMAL ANNEALING INDUCED ORDER-DISORDER TRANSITION IN GA0.52IN0.48P/(AL0.35GA0.65)0.5IN0.5P HETEROSTRUCTURES

被引：12

作者：

HAMISCH, Y ^{[1
]}

STEFFEN, R ^{[1
]}

FORCHEL, A ^{[1
]}

RONTGEN, P ^{[1
]}

机构：

[1] IBM CORP,RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermally induced transition from the ordered to the disordered state of Ga0.52In0.48P/(Al0.35Ga0.65)In0.5P layers was investigated by means of rapid thermal annealing and photoluminescence spectroscopy. The annealing temperature and annealing time dependence of the luminescence was studied in the temperature range from 500 up to 1050-degrees-C and for annealing times between 5 and 600 s. Within a very small temperature range of less than 40-degrees we observe an emission energy blue shift of the GaInP luminescence band by about 100 meV. The shift occurs due to a complete disordering of the previously ordered layers without a simultaneous destruction of the heterostructure. The photoluminescence of the quaternary AlGaInP barrier was also observed and shows a simultaneous blue shift of about 90 meV due to an order-disorder transition.

引用

收藏

页码：3007 / 3009

页数：3

相关论文

共 15 条

[1]

BUCHAN N, 1991, I PHYS C SER, V120, P529

[2] INTERDIFFUSION BETWEEN GAAS AND ALAS [J].

CHANG, LL ;

KOMA, A .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :138-141

[3] EFFECTS OF STEP MOTION ON ORDERING IN GAINP [J].

CHEN, GS ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1991, 59 (03) :324-326

[4] EFFECT OF HEAT-TREATMENT ON INGAAS/GAAS QUANTUM-WELLS [J].

ELMAN, B ;

KOTELES, ES ;

MELMAN, P ;

JAGANNATH, C ;

ARMIENTO, CA ;

ROTHMAN, M .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) :1351-1353

[5] DISORDERING OF THE ORDERED STRUCTURE IN MOCVD-GROWN GAINP AND ALGAINP BY IMPURITY DIFFUSION AND THERMAL ANNEALING [J].

GAVRILOVIC, P ;

DABKOWSKI, FP ;

MEEHAN, K ;

WILLIAMS, JE ;

STUTIUS, W ;

HSIEH, KC ;

HOLONYAK, N ;

SHAHID, MA ;

MAHAJAN, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :426-433

[6] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[7] PHOTOLUMINESCENCE STUDY FOR THERMAL-INDUCED AND IMPURITY-INDUCED ORDER-DISORDER TRANSFORMATIONS IN GA0.5IN0.5P EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HORNG, RH ;

HAUNG, LC ;

LEE, MK .

MATERIALS CHEMISTRY AND PHYSICS, 1992, 32 (01) :73-76

[8] NEW WINDOW-STRUCTURE INGAALP VISIBLE-LIGHT LASER-DIODES BY SELF-SELECTIVE ZN DIFFUSION-INDUCED DISORDERING [J].

ITAYA, K ;

ISHIKAWA, M ;

HATAKOSHI, G ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1496-1500

[9] HIGH-OPTICAL-QUALITY GAINP AND GAINP AIINP DOUBLE HETEROSTRUCTURE LASERS GROWN ON GAAS SUBSTRATES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

KIKUCHI, A ;

KISHINO, K ;

KANEKO, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4557-4559

[10] CARRIER CAPTURE IN INTERMIXED QUANTUM WIRES WITH SHARP LATERAL CONFINEMENT [J].

LEIER, H ;

FORCHEL, A ;

MAILE, BE ;

MAYER, G ;

HOMMEL, J ;

WEIMANN, G ;

SCHLAPP, W .

APPLIED PHYSICS LETTERS, 1990, 56 (01) :48-50