LIGHT-ENHANCED REACTIVATION OF PASSIVATED BORON IN HYDROGEN TREATED SILICON

被引：11

作者：

ZUNDEL, T

WEBER, J

TILLY, L

机构：

[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90147-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermal reactivation of the boron acceptor in hydrogenated silicon is strongly enhanced if the anneals are performed under illumination. The changes of the inactive boron concentration R versus annealing time t satisfy the equation dR/dt = -rR2/(N(A) - R)2, where N(A) is the total boron concentration. Under strong illumination the annealing parameter r is proportional to the light intensity.

引用

页码：361 / 364

页数：4

共 10 条

[1]

BLAKEMORE JS, 1987, SEMICONDUCTOR STATIS, P262

[2] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].