ANNEALING OF SB+-ION-IMPLANTED SI

被引：5

作者：

HOLLAND, OW

FATHY, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5326 / 5330

页数：5

共 21 条

[1] DOPANT REDISTRIBUTION DURING TITANIUM SILICIDE FORMATION [J].

AMANO, J ;

MERCHANT, P ;

CASS, TR ;

MILLER, JN ;

KOCH, T .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2689-2693

[2]

Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[3] AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J].

CHRISTEL, LA ;

GIBBONS, JF ;

MYLROIE, S .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6176-6182

[4] HIGH-SPEED DROPLET MIGRATION IN SILICON [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2325-2331

[5] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[6] MODELING OF DOPANT DIFFUSION DURING RAPID THERMAL ANNEALING [J].

FAIR, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :926-932

[7]

FAIR RB, 1981, IMPURITY DOPING PROC, pCH7

[8] ENHANCED DIFFUSION OF HIGH-TEMPERATURE ION-IMPLANTED ANTIMONY INTO SILICON [J].

GAMO, K ;

MASUDA, K ;

NAMBA, S .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :391-+

[9] CHANNELING MEASUREMENTS IN AS-DOPED SI [J].

HASKELL, J ;

RIMINI, E ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3425-&

[10]

HODGSON RT, 1983, LASER INTERACTION TR, P141

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