SOME CHARGE PHENOMENA IN D-C REACTIVELY SPUTTERED ALUMINA FILMS ON SILICON

被引：10

作者：

CHEN, MC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 04期

关键词：

D O I：

10.1149/1.2408118

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：591 / +

页数：1

相关论文

共 35 条

[31] AL2O3-SILICON INSULATED GATE FIELD EFFECT TRANSISTORS
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[32] GAS INCORPORATION INTO SPUTTERED FILMS
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[33] CHARGE PHENOMENA IN DC REACTIVELY SPUTTERED SIO2 FILMS
WU, SY
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[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5613 - +
[34] WU SY, PRIVATE COMMUNICATIO
[35] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES
ZAININGER, KH
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +

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