SELF-DEVELOPMENT PROPERTIES OF NITROCELLULOSE FOR FOCUSED ION-BEAM LITHOGRAPHY

被引：4

作者：

KANEKO, H ^{[1
]}

YASUOKA, Y ^{[1
]}

GAMO, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1764 / 1767

页数：4

共 7 条

[1] NITROCELLULOSE AS A SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

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DONNELLY, JP ;

WOODHOUSE, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1178-1181

[2] NITROCELLULOSE AS A POSITIVE OR NEGATIVE SELF-DEVELOPING RESIST [J].

GEIS, MW ;

RANDALL, JN ;

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BROMLEY, EI ;

ASTOLFI, DK ;

ECONOMOU, NP .

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[3] SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

DEUTSCH, TF ;

DEGRAFF, PD ;

KROHN, KE ;

STERN, LA .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :74-76

[4] FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS [J].

HARAKAWA, K ;

YASUOKA, Y ;

GAMO, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :355-357

[5]

HARAKAWA K, 1985, 16TH P S ION IMPL SU, P17

[6] NITROCELLULOSE AS A SELF-DEVELOPING RESIST FOR FOCUSED ION-BEAM LITHOGRAPHY [J].

KANEKO, H ;

YASUOKA, Y ;

GAMO, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03) :982-985

[7] FOCUSED ION-BEAM ETCHING OF NITROCELLULOSE [J].

YASUOKA, Y ;

HARAKAWA, K ;

GAMO, K ;

NAMBA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :405-408

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