CHARACTERIZATION OF INP/GAAS/SI STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

PEARTON, SJ

SHORT, KT

MACRANDER, AT

ABERNATHY, CR

MAZZI, VP

HAEGEL, NM

ALJASSIM, MM

VERNON, SM

HAVEN, VE

机构：

[1] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

[3] SPIRE CORP,BEDFORD,MA 01730

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1083 / 1088

页数：6

共 18 条

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KROEMER HB, 1986, P MATER RES SOC, V67, P3

[8] CHARACTERIZATION OF INP/GAAS EPILAYERS GROWN ON SI SUBSTRATES BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

LEE, MK ;

WUU, DS ;

TUNG, HH ;

YU, KY ;

HUANG, KC .

APPLIED PHYSICS LETTERS, 1988, 52 (11) :880-882

[9] HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

LEE, MK ;

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TUNG, HH .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1725-1726

[10] GROWTH AND CHARACTERIZATION OF INP EPILAYERS ON ZNSE-COATED SI SUBSTRATES BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

LEE, MK ;

WUU, DS ;

TUNG, HH ;

CHANG, JH ;

LIN, YF .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :107-109

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