CHARACTERIZATION OF INP/GAAS EPILAYERS GROWN ON SI SUBSTRATES BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：11

作者：

LEE, MK

WUU, DS

TUNG, HH

YU, KY

HUANG, KC

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.99260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：880 / 882

页数：3

共 14 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHEN, CH ;

KITAMURA, M ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965

[3]

Cullity B.D., 1978, ANSWERS PROBLEMS ELE

[4] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS [J].

FUKUI, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L53-L56

[5] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[6] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

LEE, JW ;

SHICHIJO, H ;

TSAI, HL ;

MATYI, RJ .

APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33

[7] LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF INP USING A TRIMETHYLINDIUM-TRIMETHYLPHOSPHINE ADDUCT SOURCE [J].

LEE, MK ;

WUU, DS ;

TUNG, HH .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1805-1807

[8] HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

LEE, MK ;

WUU, DS ;

TUNG, HH .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1725-1726

[9] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J].

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3789-3794

[10] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].

OTSUKA, N ;

CHOI, C ;

NAKAMURA, Y ;

NAGAKURA, S ;

FISCHER, R ;

PENG, CK ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :277-279

← 1 2 →