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CONDUCTIVITY-TYPE CONVERSION IN MULTIPLE-IMPLANT MULTIPLE-ANNEAL SOI

被引：4
作者：
BUCZKOWSKI, A
RADZIMSKI, ZJ
ROZGONYI, GA
机构：
[1] Department of Materials Science and Engineering, North Carolina State University, Raleigh
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 01期
关键词：
D O I：
10.1109/16.65737
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of an investigation of the electrical properties of “superficial” silicon and epitaxial capping layers grown on multipleimplantlanneal SIMOX and ZMR substrates are presented. An unexpected SIMOX conductivity type change (from n to p) was observed in the SIMOX superficial layer, as well as in subsequently grown epilayers. It is believed that the conductivity-type change is related to the presence of a process-induced acceptor impurity or an impurity (oxygen)- vacancy complex. © 1991 IEEE
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页码：61 / 66
页数：6
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