THE EFFECT OF CARBON CONTAMINATION AND STRESS ON DISLOCATION GENERATION IN SIMOX

SIMOX films with dislocation densities below the detection limit of planar transmission electron microscopy (106/cm2) have been achieved using a single ion implant of 1.6 x 1018 0+/cm2. The realization of these low defect density films at the relatively high implant dose level is associated with low carbon content in the SIMOX layer (<2 x 1018/cm3). Thus, it can be concluded that control of the carbon in SIMOX films may obviate the need for multiple implants to achieve low defect densities. It is also observed that stress in the as-implanted SIMOX films, as measured by Raman line shift, is a good index of the dislocation formation during subsequent annealing of the SIMOX film. © 1990, The Electrochemical Society, Inc. All rights reserved.