REDUCED HOT-CARRIER RELIABILITY DEGRADATION OF X-RAY-IRRADIATED MOSFETS IN A 0.25 MU-M CMOS TECHNOLOGY WITH ULTRA-THIN GATE OXIDE

被引：6

作者：

ACOVIC, A ^{[1
]}

HSU, CCH ^{[1
]}

HSIA, LC ^{[1
]}

AITKEN, JM ^{[1
]}

机构：

[1] IBM CORP,GTD,FISHKILL,NY 12533

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 09期

关键词：

D O I：

10.1016/0038-1101(93)90177-R

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1353 / 1355

页数：3

共 16 条

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