UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH

被引：9

作者：

BERTRU, N ^{[1
]}

NOUAOURA, M ^{[1
]}

BONNET, J ^{[1
]}

LASSABATERE, L ^{[1
]}

BEDEL, E ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST,F-31077 TOULOUSE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 68卷 / 03期

关键词：

D O I：

10.1016/0169-4332(93)90257-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of sacrificial oxides by UV-ozone exposure on GaAs and InP is a well established procedure in the preparation of clean substrates for MBE growth. We describe a UV-ozone treatment used to prepare GaSb(100) substrates and report results obtained by Auger (Auger electron spectroscopy) which show that the quality of the so prepared substrates is excellent for MBE (molecular beam epitaxy).

引用

页码：357 / 359

页数：3

共 7 条

[1] CLEAN AND DAMAGE-FREE GAAS-SURFACES PREPARED BY ULTRASONIC RUNNING DEIONIZED WATER-TREATMENT [J].