STRAIN DISTRIBUTION IN INP/INGAAS SUPERLATTICE STRUCTURE DETERMINED BY HIGH-RESOLUTION X-RAY-DIFFRACTION

被引:16
作者
KROST, A
BOHRER, J
ROEHLE, H
BAUER, G
机构
[1] HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH,D-10587 BERLIN 10,GERMANY
[2] JOHANNES KEPLER UNIV,INST HALBLEITERPHYS,A-4040 LINZ,AUSTRIA
关键词
D O I
10.1063/1.111132
中图分类号
O59 [应用物理学];
学科分类号
摘要
Interfacial strain distribution in a short period InP/InGaAs superlattice structure is evaluated by means of high resolution x-ray diffraction. The diffraction pattern of the structure allows an unambiguous determination of interfacial strain distribution. From the numerical calculation, positively strained interfacial monolayers at the InP-->InGaAs and negatively strained interfacial monolayers at the InGaAs-->InP interfaces had to be introduced in order to reproduce the experimental data. At the InP-->InGaAs interfaces a group V exchange reaction leading to a positively strained InAs or InAs1-xP interfacial layer is compatible with the simulation. At the InGaAs-->InP interfaces negatively strained ternary or quaternary InGaAsyP1_y meet these requirements. The results are consistent with low temperature calorimetric absorption measurements which exhibit a wide band gap InGaAsP-like absorption feature at 1.48 eV beyond the InP energy gap.
引用
收藏
页码:469 / 471
页数:3
相关论文
共 16 条
[1]  
BOHRER J, 1992, APPL PHYS LETT, V60, P2258, DOI 10.1063/1.107047
[2]   COMPOSITION AND LATTICE-MISMATCH MEASUREMENT OF THIN SEMICONDUCTOR LAYERS BY X-RAY-DIFFRACTION [J].
FEWSTER, PF ;
CURLING, CJ .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4154-4158
[3]   MODE OF GROWTH IN LP-MOVPE DEPOSITION OF GAINAS INP QUANTUM-WELLS [J].
GRUTZMACHER, D ;
HERGETH, J ;
REINHARDT, F ;
WOLTER, K ;
BALK, P .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (05) :471-479
[4]   STUDY OF INTERRUPTED MOVPE GROWTH OF INGAAS/INP SUPERLATTICE [J].
JIANG, XS ;
CLAWSON, AR ;
YU, PKL .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :547-552
[6]   OMVPE GROWTH OF GAINAS/INP AND GAINAS/GAINASP QUANTUM-WELLS [J].
KAMEI, H ;
HAYASHI, H .
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :567-572
[7]   CHARACTERIZATION OF INTERFACE STRUCTURE IN GAINAS/INP SUPERLATTICES BY MEANS OF X-RAY-DIFFRACTION [J].
MEYER, R ;
HOLLFELDER, M ;
HARDTDEGEN, H ;
LENGELER, B ;
LUTH, H .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :583-588
[8]   DESORPTION OF INDIUM DURING THE GROWTH OF GAAS/INGAAS/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J].
MOZUME, T ;
OHBU, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (10) :3277-3281
[9]   INTERMIXING PROCESS OF INGAAS INP MQW GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AT THERMAL ANNEALING [J].
NAKASHIMA, K ;
KAWAGUCHI, Y ;
KAWAMURA, Y ;
ASAHI, H ;
IMAMURA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10) :L1620-L1622
[10]   ANALYSIS OF GROWTH-CONDITIONS FOR THE DEPOSITION OF MONOLAYERS OF GAINAS, GAAS AND INAS IN INP BY LP-MOVPE [J].
SEIFERT, W ;
DEPPERT, K ;
FORNELL, JO ;
LIU, X ;
NILSSON, S ;
PISTOL, ME ;
SAMUELSON, L .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :531-535