ANALYSIS OF GROWTH-CONDITIONS FOR THE DEPOSITION OF MONOLAYERS OF GAINAS, GAAS AND INAS IN INP BY LP-MOVPE

被引：11

作者：

SEIFERT, W ^{[1
]}

DEPPERT, K ^{[1
]}

FORNELL, JO ^{[1
]}

LIU, X ^{[1
]}

NILSSON, S ^{[1
]}

PISTOL, ME ^{[1
]}

SAMUELSON, L ^{[1
]}

机构：

[1] EPIQUIP AB,S-22370 LUND,SWEDEN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90512-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaInAs/InP as well as GaAs/InP and InAs/InP quantum wells have been grown in the monolayer thickness range by LP-MOVPE. In a "growth window" at low growth rates (0.5-0.7 ML/s) and low AsH3 pressure (1 X 10(-3) Molar fraction) on exactly oriented (001) InP substrates the AsH3 interaction with the InP surface can be drastically reduced. Excellent QW luminescence corresponding to integer-number of quantum well thickness with no detectable interface effects at the lower interface could be observed. The 1 ML thick QWs of InAs/InP, GaInAs/InP and GaAs/InP show sharp luminescence peaks at 1.29, 1.305 and 1.327 eV. "Noninteger ML peaks" appear at higher growth rates and at substrate edges with a higher step density. The origin of these additional peaks are discussed.

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页码：531 / 535

页数：5

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