INTERFACIAL REACTION OF MO-W ALLOYS WITH SILICON

被引:10
作者
OLOWOLAFE, JO [1 ]
COLGAN, EG [1 ]
PALMSTROM, CJ [1 ]
MAYER, JW [1 ]
机构
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
关键词
D O I
10.1016/0040-6090(86)90397-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:245 / 254
页数:10
相关论文
共 29 条
  • [1] [Anonymous], 1967, HDB LATTICE SPACINGS
  • [2] SOLID-STATE REACTIONS OF TA-W THIN-FILMS AND SI SINGLE-CRYSTALS
    APPELBAUM, A
    EIZENBERG, M
    BRENER, R
    [J]. VACUUM, 1983, 33 (04) : 227 - 230
  • [3] SILICIDES FORMATION FOR REFRACTORY-METAL ALLOYS (TA-V AND TI-V) ON SI
    APPELBAUM, A
    EIZENBERG, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2341 - 2345
  • [4] PHASE-SEPARATION AND LAYER SEQUENCE REVERSAL DURING SILICIDE FORMATION WITH NI-CR ALLOYS AND NI-CR BILAYERS
    APPELBAUM, A
    EIZENBERG, M
    BRENER, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 914 - 919
  • [5] TITANIUM-TUNGSTEN CONTACTS TO SI - THE EFFECTS OF ALLOYING ON SCHOTTKY CONTACT AND ON SILICIDE FORMATION
    BABCOCK, SE
    TU, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6898 - 6905
  • [6] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT
    BAGLIN, J
    DEMPSEY, J
    HAMMER, W
    DHEURLE, F
    PETERSSON, S
    SERRANO, C
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661
  • [7] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH
    BAGLIN, JEE
    DHEURLE, FM
    HAMMER, WN
    PETERSSON, S
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 491 - 497
  • [8] BORDERS JA, 1974, APPL ION BEAMS METAL, P179
  • [9] CHEN JR, 1983, INTERFACES CONTACTS, P251
  • [10] FORMATION OF SHALLOW SCHOTTKY CONTACTS TO SI USING PT-SI AND PD-SI ALLOY-FILMS
    EIZENBERG, M
    FOELL, H
    TU, KN
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 861 - 868