RIE-INDUCED DAMAGE AND CONTAMINATION IN SILICON

被引：16

作者：

LEE, YH

OEHRLEIN, GS

RANSOM, C

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 112卷 / 1-2期

关键词：

D O I：

10.1080/10420158908212997

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：221 / 232

页数：12

共 43 条

[1] DEEP LEVELS INTRODUCED DURING ELECTRON-BEAM DEPOSITION OF METALS ON N-TYPE SILICON [J].

AURET, FD ;

MOONEY, PM .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :988-993

[2] TRANSIENT CAPACITANCE STUDY OF DEFECTS INTRODUCED BY ELECTRON-BEAM DEPOSITION OF METALS ON P-TYPE SILICON [J].

AURET, FD ;

MOONEY, PM .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :984-987

[3] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1976, 14 (03) :872-883

[4]

CORBETT JW, 1966, SOLID STATE PHYSICS, V7

[5] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J].

COYLE, GJ ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :604-606

[6]

Crawford J. H., 1975, POINT DEFECTS SOLIDS, V2

[7] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

CROWDER, BL ;

TITLE, RS ;

BRODSKY, MH ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[8] PHOTOLUMINESCENCE OF LOW-ENERGY ION BOMBARDED SILICON [J].

DAVIS, RJ ;

HABERMEIER, HU ;

WEBER, J .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1295-1297

[9] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J].

EPHRATH, LM ;

BENNETT, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1822-1826

[10]

EPHRATH LM, 1981, SOLID STATE TECHNOL, V24, P182

← 1 2 3 4 5 →