SURFACE AND INTERFACE STRUCTURE OF EPITAXIAL COSI2 FILMS ON SI(111)

被引：30

作者：

STALDER, R ^{[1
]}

ONDA, N ^{[1
]}

SIRRINGHAUS, H ^{[1
]}

VONKANEL, H ^{[1
]}

BULLELIEUWMA, CWT ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface and interface structures of molecular beam epitaxially grown CoSi2 films on Si(111) have been studied by scanning tunneling microscopy and by transmission electron microscopy, respectively. All surfaces are found to be inhomogeneous, exhibiting (2 x 1) and (2 x 2) reconstructed domains along with unreconstructed areas, depending on their stoichiometry. All of them could be imaged with atomic resolution. The surface step structure and the formation of pinholes have been examined for a wide range of growth conditions. Evidence is presented for micron-scale surface diffusion of Si on CoSi2 at temperatures as low as 800 K. The interface step structure, studied by transmission electron microscopy, has been found to depend critically on the details of the growth procedure.

引用

页码：2307 / 2311

页数：5

共 26 条

[1] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J].