OPTOELECTRONIC INTEGRATED RECEIVERS ON INP SUBSTRATES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：8

作者：

SASAKI, G

KOIKE, K

KUWATA, N

ONO, K

机构：

[1] Sumitomo Electric Ind, Yokohama, Jpn

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1989年 / 7卷 / 10期

关键词：

15;

D O I：

10.1109/50.39090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1510 / 1514

页数：5

共 15 条

[1] DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS [J].

CHEN, CY ;

CHO, AY ;

CHENG, KY ;

PEARSALL, TP ;

OCONNOR, P ;

GARBINSKI, PA .

ELECTRON DEVICE LETTERS, 1982, 3 (06) :152-155

[2] MONOLITHICALLY INTEGRATED RECEIVER FRONT END - IN0.53GA0.47AS P-I-N AMPLIFIER [J].

CHENG, CL ;

CHANG, RPH ;

TELL, B ;

PARKER, SMZ ;

OTA, Y ;

VELLACOLEIRO, GP ;

MILLER, RC ;

ZILKO, JL ;

KASPER, BL ;

BROWNGOEBELER, KF ;

MATTERA, VD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1439-1444

[3] A MONOLITHIC SILICON PHOTODETECTOR AMPLIFIER IC FOR FIBER AND INTEGRATED-OPTICS APPLICATION [J].

HARTMAN, DH ;

GRACE, MK ;

RYAN, CR .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (04) :729-738

[4]

HIROSE K, 1985, P INT S GAAS RELATED, P529

[5] HIGH-TRANSCONDUCTANCE ALLNAS/GAINAS HIFETS GROWN BY MOCVD [J].

KAMADA, M ;

KOBAYASHI, T ;

ISHIKAWA, H ;

MORI, Y ;

KANEKO, K ;

KOJIMA, C .

ELECTRONICS LETTERS, 1987, 23 (06) :297-298

[6]

KAMEI H, 1986, P INT S GAAS RELATED, P183

[7] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA ;

BALLMAN, AA ;

BEEBE, ED ;

DEWINTER, JC ;

MARTIN, RJ .

ELECTRONICS LETTERS, 1980, 16 (10) :353-355

[8] A MONOLITHIC 4-CHANNEL PHOTORECEIVER INTEGRATED ON A GAAS SUBSTRATE USING METAL-SEMICONDUCTOR-METAL PHOTODIODES AND FETS [J].

MAKIUCHI, M ;

HAMAGUCHI, H ;

KUMAI, T ;

ITO, M ;

WADA, O ;

SAKURAI, T .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :634-635

[9] A MONOLITHICALLY INTEGRATED INGAAS/INP PHOTORECEIVER OPERATING WITH A SINGLE 5-V POWER-SUPPLY [J].

MATSUDA, K ;

KUBO, M ;

OHNAKA, K ;

SHIBATA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1284-1288

[10]

MATSUEDA H, 1985, P INT S GAAS RELATED, P655

← 1 2 →