OFF-STATE LEAKAGE CURRENTS IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH 10-NM THERMALLY NITRIDED AND REOXIDIZED NITRIDED OXIDES AS THE GATE DIELECTRIC

The effects of nitridation and reoxidation on the off-state leakage currents of n-channel metal-oxide-semiconductor-field-effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low-field range but ensuing reoxidation can effectively reduce it. Nitridation-induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap-assisted tunneling model has been proposed to explain this off-state gate leakage.