ULTRAFAST PHOTOLUMINESCENCE DECAY IN LOW-TEMPERATURE MOCVD-GROWN INXGA1-XAS

被引：7

作者：

KROTKUS, A ^{[1
]}

MARCINKEVICIUS, S ^{[1
]}

PASISKEVICIUS, V ^{[1
]}

OLIN, U ^{[1
]}

机构：

[1] INST OPT RES,S-10044 STOCKHOLM,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 07期

关键词：

D O I：

10.1088/0268-1242/9/7/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved photoluminescence spectra of low-temperature MOCVD-grown layers of In0.16Ga0.84As and In0.47Ga0.53As have been measured with subpicosecond temporal resolution. The analysis of transients monitored at different photoluminescence energies allowed a separate estimation of both the electron and hole trapping times in these materials. For both layers the hole trapping times were about 34 ps, while the electron trapping times were equal t 18 and 60 ps for the layers of In0.16Ga0.84As and In0.47Ga0.53As respectively.

引用

页码：1382 / 1386

页数：5

共 11 条

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